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| TYPE | DESCRIPTION |
| Fet Type: | P-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | -100V |
| Drain-Source On Resistance-Max: | 0.205Ω |
| Rated Power Dissipation: | 66W |
| Qg Gate Charge: | 58nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | -13A |
| Turn-on Delay Time: | 15ns |
| Turn-off Delay Time: | 45ns |
| Rise Time: | 58ns |
| Fall Time: | 46ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | -4V |
| Technology: | Advanced Process Technology |
| Height - Max: | 2.39mm |
| Length: | 6.73mm |
| Input Capacitance: | 760pF |
| Package Style: | TO-252AA |
| Mounting Method: | Surface Mount |
3000
11.0354
33106.2
6000
8.8152
52891.2
