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| TYPE | DESCRIPTION |
| Fet Type: | P-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 200V |
| Drain-Source On Resistance-Max: | 0.8Ω |
| Rated Power Dissipation: | 35W |
| Qg Gate Charge: | 29nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 4.3A |
| Turn-on Delay Time: | 12ns |
| Turn-off Delay Time: | 28ns |
| Rise Time: | 27ns |
| Fall Time: | 24ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 4V |
| Technology: | Si |
| Input Capacitance: | 700pF |
| Package Style: | TO-220FP (TO-220FPAB) |
| Mounting Method: | Through Hole |
1000
25.7371
25737.1
2000
20.8431
41686.2
3000
20.5594
61678.2
