TYPE | DESCRIPTION |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 400V |
Drain-Source On Resistance-Max: | 1.8Ω |
Rated Power Dissipation: | 30W |
Qg Gate Charge: | 20nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 2.6A |
Turn-on Delay Time: | 10ns |
Turn-off Delay Time: | 30ns |
Rise Time: | 14ns |
Fall Time: | 13ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 4V |
Technology: | Si |
Input Capacitance: | 410pF |
Package Style: | TO-220-3 (TO-220AB) |
Mounting Method: | Through Hole |
1000
19.5562
19556.2
2000
15.959
31918
3000
15.8172
47451.6
4000
15.6753
62701.2