TYPE | DESCRIPTION |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 150V |
Drain-Source On Resistance-Max: | 31mΩ |
Rated Power Dissipation: | 3.6W |
Qg Gate Charge: | 36nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 10A |
Turn-on Delay Time: | 9.4ns |
Turn-off Delay Time: | 14ns |
Rise Time: | 9.7ns |
Fall Time: | 3.4ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 5V |
Technology: | Si |
Height - Max: | 0.81mm |
Length: | 5mm |
Input Capacitance: | 2300pF |
Package Style: | PQFN 5 x 6 mm |
Mounting Method: | Surface Mount |
4000
12.6033
50413.2