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晶体管
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离散器
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金属氧化物半导体场效应晶体管
/
IRFD9210PBF
IRFD9210PBF
:
IRFD9210PBF
:
Mosfets
:
Vishay
:
Single P-Channe
:
-
:
Tube
:
-
TYPE
DESCRIPTION
Fet Type:
P-Ch
Drain-to-Source Voltage [Vdss]:
200V
Drain-Source On Resistance-Max:
3Ω
Rated Power Dissipation:
1|W
Qg Gate Charge:
8.9nC
Package Style:
DIP-4
Mounting Method:
Through Hole
PDF(1)
2500
12.7976
31994
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