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| TYPE | DESCRIPTION |
| Fet Type: | P-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 100V |
| Drain-Source On Resistance-Max: | 117mΩ |
| Rated Power Dissipation: | 3.1W |
| Qg Gate Charge: | 73nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 23A |
| Turn-on Delay Time: | 13ns |
| Turn-off Delay Time: | 40ns |
| Rise Time: | 64ns |
| Fall Time: | 45ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 4V |
| Technology: | Advanced Process Technology |
| Input Capacitance: | 1450pF |
| Package Style: | TO-263-3 (D2PAK) |
| Mounting Method: | Surface Mount |
800
25.075
20060
1600
20.4829
32772.64
2400
20.1996
48479.04
3200
20.058
64185.6
