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| TYPE | DESCRIPTION |
| Fet Type: | Dual N-Ch |
| No of Channels: | 2 |
| Drain-to-Source Voltage [Vdss]: | 30V |
| Drain-Source On Resistance-Max: | 16.4mΩ/11.8mΩ |
| Rated Power Dissipation: | 2W |
| Qg Gate Charge: | 6.7nC/14nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 9.1A/11A |
| Turn-on Delay Time: | 6ns/8ns |
| Turn-off Delay Time: | 8ns/13ns |
| Rise Time: | 9.3ns/14ns |
| Fall Time: | 3.4ns/5.3ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 1.8V |
| Input Capacitance: | 850pF/1790pF |
| Package Style: | SOIC-8 |
| Mounting Method: | Surface Mount |
4000
8.3044
33217.6
8000
7.9553
63642.4
