TYPE | DESCRIPTION |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 30V |
Drain-Source On Resistance-Max: | 3.3mΩ |
Rated Power Dissipation: | 2.5W |
Qg Gate Charge: | 30nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 21A |
Turn-on Delay Time: | 16ns |
Turn-off Delay Time: | 18ns |
Rise Time: | 19ns |
Fall Time: | 11ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 2.35V |
Technology: | Si |
Input Capacitance: | 4090pF |
Package Style: | SOIC-8 |
Mounting Method: | Surface Mount |
4000
8.4561
33824.4
8000
8.1628
65302.4