取消
| TYPE | DESCRIPTION |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 100V |
| Drain-Source On Resistance-Max: | 26mΩ |
| Rated Power Dissipation: | 2.5W |
| Qg Gate Charge: | 61nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 6.9A |
| Turn-on Delay Time: | 24ns |
| Turn-off Delay Time: | 29ns |
| Rise Time: | 20ns |
| Fall Time: | 11ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 5.5V |
| Technology: | Si |
| Height - Max: | 1.75mm |
| Length: | 5mm |
| Input Capacitance: | 3180pF |
| Package Style: | SOIC-8 |
| Mounting Method: | Surface Mount |
4000
14.6161
58464.4
