TYPE | DESCRIPTION |
Fet Type: | Dual P-Ch |
No of Channels: | 2 |
Drain-to-Source Voltage [Vdss]: | -30V |
Drain-Source On Resistance-Max: | 0.098Ω |
Rated Power Dissipation: | 2W |
Qg Gate Charge: | 34nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | -4.9A |
Turn-on Delay Time: | 19ns |
Turn-off Delay Time: | 51ns |
Rise Time: | 20ns |
Fall Time: | 48ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | -1V |
Technology: | Generation V |
Height - Max: | 1.75mm |
Length: | 5mm |
Input Capacitance: | 710pF |
Package Style: | SOIC-8 |
Mounting Method: | Surface Mount |
4000
9.4575
37830