TYPE | DESCRIPTION |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 30V |
Drain-Source On Resistance-Max: | 0.046Ω |
Rated Power Dissipation: | 2W |
Qg Gate Charge: | 33nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 6.5A |
Turn-on Delay Time: | 8.1ns |
Turn-off Delay Time: | 26ns |
Rise Time: | 8.9ns |
Fall Time: | 17ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 1V |
Technology: | Generation V |
Height - Max: | 1.5mm |
Length: | 5mm |
Input Capacitance: | 650pF |
Package Style: | SOIC-8 |
Mounting Method: | Surface Mount |
4000
9.0984
36393.6
8000
7.3031
58424.8