TYPE | DESCRIPTION |
Fet Type: | Dual N/P-Ch |
No of Channels: | 2 |
Drain-to-Source Voltage [Vdss]: | -30V/30V |
Drain-Source On Resistance-Max: | 0.08Ω/0.16Ω |
Rated Power Dissipation: | 1.4W |
Qg Gate Charge: | 25nC |
Gate-Source Voltage-Max [Vgss]: | -20V/20V |
Drain Current: | -3A/4A |
Turn-on Delay Time: | 6.8ns/11ns |
Turn-off Delay Time: | 22ns/25ns |
Rise Time: | 21ns/17ns |
Fall Time: | 7.7ns/18ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | -1V/1V |
Technology: | Generation V |
Height - Max: | 1.75mm |
Length: | 5mm |
Input Capacitance: | 520pF/440pF |
Package Style: | SOIC-8 |
Mounting Method: | Surface Mount |
4000
7.8795
31518