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| TYPE | DESCRIPTION |
| Fet Type: | Dual N/P-Ch |
| No of Channels: | 2 |
| Drain-to-Source Voltage [Vdss]: | 20V |
| Drain-Source On Resistance-Max: | 50mΩ/90mΩ |
| Rated Power Dissipation: | 2W |
| Qg Gate Charge: | 20nC/22nC |
| Gate-Source Voltage-Max [Vgss]: | 12V |
| Drain Current: | 5.2A/4.3A |
| Turn-on Delay Time: | 9ns/8.4ns |
| Turn-off Delay Time: | 32ns/51ns |
| Rise Time: | 42ns/26ns |
| Fall Time: | 51ns/33ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 0.7V |
| Technology: | Generation V |
| Input Capacitance: | 660pF/610pF |
| Package Style: | SOIC-8 |
| Mounting Method: | Surface Mount |
4000
8.2386
32954.4
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