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| TYPE | DESCRIPTION |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 200V |
| Drain-Source On Resistance-Max: | 100mΩ |
| Rated Power Dissipation: | 2.8W |
| Qg Gate Charge: | 26nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 3.4A |
| Turn-on Delay Time: | 6.2ns |
| Turn-off Delay Time: | 7.2ns |
| Rise Time: | 8.6ns |
| Fall Time: | 14ns |
| Operating Temp Range: | -40°C to +150°C |
| Gate Source Threshold: | 5V |
| Input Capacitance: | 1500pF |
| Package Style: | DIRECTFET |
| Mounting Method: | Surface Mount |
4800
24.3568
116912.64
