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| TYPE | DESCRIPTION |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 60V |
| Drain-Source On Resistance-Max: | 7mΩ |
| Rated Power Dissipation: | 2.8W |
| Qg Gate Charge: | 50nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 86A |
| Turn-on Delay Time: | 16ns |
| Turn-off Delay Time: | 28ns |
| Rise Time: | 29ns |
| Fall Time: | 13ns |
| Operating Temp Range: | -40°C to +150°C |
| Gate Source Threshold: | 4.9V |
| Technology: | Si |
| Height - Max: | 0.676mm |
| Length: | 6.35mm |
| Input Capacitance: | 2120pF |
| Package Style: | DIRECTFET |
| Mounting Method: | Surface Mount |
4800
24.0636
115505.28
