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| TYPE | DESCRIPTION |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 30V |
| Drain-Source On Resistance-Max: | 10.3mΩ |
| Rated Power Dissipation: | 2.1W |
| Qg Gate Charge: | 17nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 14A |
| Turn-on Delay Time: | 11ns |
| Turn-off Delay Time: | 12ns |
| Rise Time: | 34ns |
| Fall Time: | 3.7ns |
| Operating Temp Range: | -40°C to +150°C |
| Gate Source Threshold: | 2.35V |
| Technology: | Si |
| Height - Max: | 0.506mm |
| Length: | 3.95mm |
| Input Capacitance: | 1300pF |
| Package Style: | DIRECTFET |
| Mounting Method: | Surface Mount |
4800
13.6046
65302.08
