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| TYPE | DESCRIPTION |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 100V |
| Drain-Source On Resistance-Max: | 23mΩ |
| Rated Power Dissipation: | 200W |
| Qg Gate Charge: | 130nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 57A |
| Turn-on Delay Time: | 12ns |
| Turn-off Delay Time: | 45ns |
| Rise Time: | 58ns |
| Fall Time: | 47ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 4V |
| Technology: | Si |
| Height - Max: | 4.83mm |
| Length: | 9.65mm |
| Input Capacitance: | 3130pF |
| Package Style: | TO-263-3 (D2PAK) |
| Mounting Method: | Surface Mount |
800
24.4984
19598.72
1600
20.058
32092.8
2400
19.7647
47435.28
3200
19.623
62793.6
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