TYPE | DESCRIPTION |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 40V |
Drain-Source On Resistance-Max: | 0.004Ω |
Rated Power Dissipation: | 3.8W |
Qg Gate Charge: | 200nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 162A |
Turn-on Delay Time: | 17ns |
Turn-off Delay Time: | 72ns |
Rise Time: | 140ns |
Fall Time: | 26ns |
Operating Temp Range: | -55°C to +175°C |
Gate Source Threshold: | 4V |
Technology: | Advanced Process Technology |
Height - Max: | 4.83mm |
Length: | 10.67mm |
Input Capacitance: | 7360pF |
Package Style: | TO-263-3 (D2PAK) |
Mounting Method: | Surface Mount |
800
21.7776
17422.08
1600
17.7619
28419.04
2400
17.6203
42288.72
3200
17.4786
55931.52