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| TYPE | DESCRIPTION |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 650V |
| Drain-Source On Resistance-Max: | 60mΩ |
| Rated Power Dissipation: | 171W |
| Qg Gate Charge: | 68nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 36A |
| Turn-on Delay Time: | 31ns |
| Turn-off Delay Time: | 114ns |
| Rise Time: | 14ns |
| Fall Time: | 4ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 4V |
| Technology: | CoolMOS |
| Input Capacitance: | 3288pF |
| Package Style: | TO-247-3 |
| Mounting Method: | Through Hole |
30
106.2419
3187.257
90
90.7184
8164.656
150
89.1378
13370.67
300
86.9795
26093.85
600
84.9631
50977.86
