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IPP60R385CPXKSA1

  • IPP60R385CPXKSA1
  • IPP60R385CPXKSA1
IPP60R385CPXKSA1
Mosfets
Infineon
N-Channel 650 V
-
Tube
-
TYPEDESCRIPTION
Fet Type:N-Ch
Drain-to-Source Voltage [Vdss]:600V
Drain-Source On Resistance-Max:385mΩ
Rated Power Dissipation:83|W
Qg Gate Charge:17nC
Package Style: TO-220-3 (TO-220AB)
Mounting Method:Through Hole
PDF(1)

50

29.4761

1473.805

1000

24.0046

24004.6

1500

23.7208

35581.2

2000

23.5788

47157.6

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