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IPP180N10N3GXKSA1

  • IPP180N10N3GXKSA1
  • IPP180N10N3GXKSA1
IPP180N10N3GXKSA1
Mosfets
Infineon
Single N-Channe
-
Tube
-
TYPEDESCRIPTION
Fet Type:N-Ch
Drain-to-Source Voltage [Vdss]:100V
Drain-Source On Resistance-Max:18mΩ
Rated Power Dissipation:71|W
Qg Gate Charge:19nC
Package Style: TO-220-3 (TO-220AB)
Mounting Method:Through Hole
PDF(1)

50

11.2169

560.845

1500

10.6394

15959.1

2000

10.1378

20275.6

5000

9.6362

48181

7500

9.1246

68434.5

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