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IPP045N10N3GXKSA1

  • IPP045N10N3GXKSA1
  • IPP045N10N3GXKSA1
IPP045N10N3GXKSA1
Mosfets
Infineon
Single N-Channe
-
Tube
-
TYPEDESCRIPTION
Fet Type:N-Ch
No of Channels:1
Drain-to-Source Voltage [Vdss]:100V
Drain-Source On Resistance-Max:4.5mΩ
Rated Power Dissipation:214W
Qg Gate Charge:88nC
Gate-Source Voltage-Max [Vgss]:20V
Drain Current:137A
Turn-on Delay Time:27ns
Turn-off Delay Time:48ns
Rise Time:59ns
Fall Time:14ns
Operating Temp Range:-55°C to +175°C
Gate Source Threshold:2.7V
Technology:OptiMOS
Input Capacitance:6320pF
Package Style: TO-220-3 (TO-220AB)
Mounting Method:Through Hole
PDF(1)

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43.7025

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69875.4

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