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IPDD60R102G7XTMA1

  • IPDD60R102G7XTMA1
  • IPDD60R102G7XTMA1
IPDD60R102G7XTMA1
Mosfets
Infineon
N-Channel 600 V
-
Reel
-
TYPEDESCRIPTION
Fet Type:N-Ch
No of Channels:1
Drain-to-Source Voltage [Vdss]:600V
Drain-Source On Resistance-Max:102mΩ
Rated Power Dissipation:139W
Qg Gate Charge:34nC
Gate-Source Voltage-Max [Vgss]:20V
Drain Current:23A
Turn-on Delay Time:18ns
Turn-off Delay Time:60ns
Rise Time:5ns
Fall Time:4ns
Operating Temp Range:-55°C to +150°C
Gate Source Threshold:3V
Technology:CoolMOS
Input Capacitance:1320pF
Package Style: HDSOP-10
Mounting Method:Surface Mount
PDF(1)

1700

58.3026

99114.42

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