取消
| TYPE | DESCRIPTION |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 800V |
| Drain-Source On Resistance-Max: | 0.45Ω |
| Rated Power Dissipation: | 73|W |
| Qg Gate Charge: | 24nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 11A |
| Turn-on Delay Time: | 10ns |
| Turn-off Delay Time: | 40ns |
| Rise Time: | 6ns |
| Fall Time: | 10ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 3V |
| Technology: | CoolMOS |
| Input Capacitance: | 770pF |
| Package Style: | TO-252-3 (DPAK) |
| Mounting Method: | Surface Mount |
2500
19.0566
47641.5
