取消
| TYPE | DESCRIPTION |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 800V |
| Drain-Source On Resistance-Max: | 1.4Ω |
| Rated Power Dissipation: | 63W |
| Qg Gate Charge: | 23nC |
| Gate-Source Voltage-Max [Vgss]: | 30V |
| Drain Current: | 3.9A |
| Turn-on Delay Time: | 25ns |
| Turn-off Delay Time: | 72ns |
| Rise Time: | 15ns |
| Fall Time: | 12ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 3.9V |
| Technology: | Si |
| Height - Max: | 2.41mm |
| Length: | 6.73mm |
| Input Capacitance: | 570pF |
| Package Style: | TO-252-3 (DPAK) |
| Mounting Method: | Surface Mount |
2500
13.5388
33847
5000
10.818
54090
(SN).jpg "RA-H261TD-1190(LF)(SN)")
.jpg "HF116F-3/220AF-2H(257)")
