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晶体管
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离散器
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金属氧化物半导体场效应晶体管
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IPD50P04P413ATMA1
IPD50P04P413ATMA1
:
IPD50P04P413ATMA1
:
Mosfets
:
Infineon
:
Single P-Channe
:
-
:
Reel
:
-
TYPE
DESCRIPTION
Fet Type:
P-Ch
Drain-to-Source Voltage [Vdss]:
40V
Drain-Source On Resistance-Max:
12.6mΩ
Rated Power Dissipation:
58|W
Qg Gate Charge:
39nC
Package Style:
TO-252-3 (DPAK)
Mounting Method:
Surface Mount
PDF(1)
2500
13.2556
33139
QUECTEL
RG525F
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