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IPD50N06S409ATMA2

  • IPD50N06S409ATMA2
  • IPD50N06S409ATMA2
  • IPD50N06S409ATMA2
  • IPD50N06S409ATMA2
IPD50N06S409ATMA2
Mosfets
Infineon
IPD50N06S4 Seri
-
Reel
-
TYPEDESCRIPTION
Fet Type:N-Ch
No of Channels:1
Drain-to-Source Voltage [Vdss]:60V
Drain-Source On Resistance-Max:9mΩ
Rated Power Dissipation:71W
Qg Gate Charge:36nC
Gate-Source Voltage-Max [Vgss]:20V
Drain Current:50A
Turn-on Delay Time:15ns
Turn-off Delay Time:20ns
Rise Time:40ns
Fall Time:5ns
Operating Temp Range:-55°C to +175°C
Gate Source Threshold:3V
Technology:OptiMOS
Input Capacitance:2911pF
Package Style: TO-252-3 (DPAK)
Mounting Method:Surface Mount
PDF(1)

2500

9.8824

24706

5000

7.9553

39776.5

7500

7.8795

59096.25

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