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IPD090N03LGATMA1

  • IPD090N03LGATMA1
  • IPD090N03LGATMA1
IPD090N03LGATMA1
Mosfets
Infineon
N-Channel 30 V
-
Reel
-
TYPEDESCRIPTION
Fet Type:N-Ch
No of Channels:1
Drain-to-Source Voltage [Vdss]:30V
Drain-Source On Resistance-Max:9mΩ
Rated Power Dissipation:42W
Qg Gate Charge:15nC
Gate-Source Voltage-Max [Vgss]:20V
Drain Current:40A
Turn-on Delay Time:4ns
Turn-off Delay Time:15ns
Rise Time:3ns
Fall Time:2.6ns
Operating Temp Range:-55°C to +175°C
Gate Source Threshold:2.2V
Technology:OptiMOS
Input Capacitance:1200pF
Package Style: TO-252-3 (DPAK)
Mounting Method:Surface Mount
PDF(1)

2500

5.2245

13061.25

5000

5.017

25085

7500

4.7237

35427.75

10000

4.5163

45163

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