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| TYPE | DESCRIPTION |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 650V |
| Drain-Source On Resistance-Max: | 0.15Ω |
| Rated Power Dissipation: | 195.3W |
| Qg Gate Charge: | 86nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 22.4A |
| Turn-on Delay Time: | 12.4ns |
| Turn-off Delay Time: | 52.8ns |
| Rise Time: | 7.6ns |
| Fall Time: | 5.6ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 4V |
| Technology: | CoolMOS |
| Input Capacitance: | 2340pF |
| Package Style: | TO-263-3 (D2PAK) |
| Mounting Method: | Surface Mount |
1000
41.1173
41117.3
