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晶体管
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离散器
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金属氧化物半导体场效应晶体管
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IPB036N12N3GATMA1
IPB036N12N3GATMA1
:
IPB036N12N3GATMA1
:
Mosfets
:
Infineon
:
Single N-Channe
:
-
:
Reel
:
-
TYPE
DESCRIPTION
Fet Type:
N-Ch
Drain-to-Source Voltage [Vdss]:
120V
Drain-Source On Resistance-Max:
3.6mΩ
Rated Power Dissipation:
300|W
Qg Gate Charge:
158nC
Package Style:
TO-263-7 (D2PAK7)
Mounting Method:
Surface Mount
PDF(1)
1000
58.7376
58737.6
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