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晶体管
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离散器
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金属氧化物半导体场效应晶体管
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IPB016N06L3GATMA1
IPB016N06L3GATMA1
:
IPB016N06L3GATMA1
:
Mosfets
:
Infineon
:
Single N-Channe
:
-
:
Reel
:
-
TYPE
DESCRIPTION
Fet Type:
N-Ch
Drain-to-Source Voltage [Vdss]:
60V
Drain-Source On Resistance-Max:
1.6mΩ
Rated Power Dissipation:
250|W
Qg Gate Charge:
125nC
Package Style:
TO-263-7 (D2PAK7)
Mounting Method:
Surface Mount
PDF(1)
1000
45.2646
45264.6
SIMCOM
SIM68E
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IRSM515-015PA
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60R375XH
60R Series 60 V 3.75 A Ø 7.4 x 3.1 mm Radial Lead POLYFUSE® Resettable PTC
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HF3FF/012-1ZS(257)
HF3FF Series 10 A SPDT 12 VDC Plastic Seal Subminiature High Power Relay
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IRFP254PBF
Single N-Channel 250 V 0.14 Ohms Flange Mount Power Mosfet - TO-247AC
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IPB016N06L3GATMA1
Single N-Channel 60 V 1.6 mOhm 125 nC OptiMOS™ Power Mosfet - D2PAK-7
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NLX2G07 Series 1.65 to 5.5 V Open Drain Dual Non-Inverting Buffer - UDFN-6
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MAX2641 Series 5.5 V 6.4 mA SMT Ultra-Low-Noise Amplifier - SOT-23-6
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Schottky Diodes & Rectifiers 20A,170V,SMPD, TRENCH SKY RECT.
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