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IPB011N04LGATMA1

  • IPB011N04LGATMA1
  • IPB011N04LGATMA1
IPB011N04LGATMA1
Mosfets
Infineon
Single N-Channe
-
Reel
-
TYPEDESCRIPTION
Fet Type:N-Ch
Drain-to-Source Voltage [Vdss]:40V
Drain-Source On Resistance-Max:1.1mΩ
Rated Power Dissipation:250|W
Qg Gate Charge:260nC
Package Style: TO-263-7 (D2PAK7)
Mounting Method:Surface Mount
PDF(1)

1000

45.1229

45122.9

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