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| TYPE | DESCRIPTION |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 650V |
| Drain-Source On Resistance-Max: | 600mΩ |
| Rated Power Dissipation: | 28|W |
| Qg Gate Charge: | 23nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 7.3A |
| Turn-on Delay Time: | 10ns |
| Turn-off Delay Time: | 64ns |
| Rise Time: | 8ns |
| Fall Time: | 11ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 3V |
| Technology: | CoolMOS |
| Height - Max: | 16.15mm |
| Length: | 10.66mm |
| Input Capacitance: | 440pF |
| Package Style: | TO-220FP (TO-220FPAB) |
| Mounting Method: | Through Hole |
50
19.4814
974.07
1000
16.0423
16042.3
1500
15.9007
23851.05
2000
15.7592
31518.4
2500
15.6175
39043.75
