取消
| TYPE | DESCRIPTION |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 1200V |
| Drain-Source On Resistance-Max: | 189mΩ |
| Rated Power Dissipation: | 94W |
| Qg Gate Charge: | 13nC |
| Gate-Source Voltage-Max [Vgss]: | 23V |
| Drain Current: | 19A |
| Turn-on Delay Time: | 5ns |
| Turn-off Delay Time: | 10.3ns |
| Rise Time: | 2ns |
| Fall Time: | 11.6ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 4.5V |
| Technology: | SiC |
| Input Capacitance: | 454pF |
| Package Style: | TO-247-4 |
| Mounting Method: | Through Hole |
30
133.5176
4005.528
480
106.8646
51295.008
