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IMW65R107M1HXKSA1

  • IMW65R107M1HXKSA1
  • IMW65R107M1HXKSA1
IMW65R107M1HXKSA1
Mosfets
Infineon
Single N-Channe
-
Tube
-
TYPEDESCRIPTION
Fet Type:N-Ch
No of Channels:1
Drain-to-Source Voltage [Vdss]:650V
Drain-Source On Resistance-Max:142mΩ
Rated Power Dissipation:75W
Qg Gate Charge:15nC
Gate-Source Voltage-Max [Vgss]:23V
Drain Current:20A
Turn-on Delay Time:9.2ns
Turn-off Delay Time:12.6ns
Rise Time:11.4ns
Fall Time:6.2ns
Operating Temp Range:-55°C to +150°C
Gate Source Threshold:4.5V
Technology:SiC
Input Capacitance:496pF
Package Style: TO-247-3
Mounting Method:Through Hole
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