TYPE | DESCRIPTION |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 650V |
Drain-Source On Resistance-Max: | 142mΩ |
Rated Power Dissipation: | 75W |
Qg Gate Charge: | 15nC |
Gate-Source Voltage-Max [Vgss]: | 23V |
Drain Current: | 20A |
Turn-on Delay Time: | 9.2ns |
Turn-off Delay Time: | 12.6ns |
Rise Time: | 11.4ns |
Fall Time: | 6.2ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 4.5V |
Technology: | SiC |
Input Capacitance: | 496pF |
Package Style: | TO-247-3 |
Mounting Method: | Through Hole |
30
171.1958
5135.874
90
145.2611
13073.499
120
143.6831
17241.972
300
138.9594
41687.82
450
136.9566
61630.47