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| TYPE | DESCRIPTION |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 650V |
| Drain-Source On Resistance-Max: | 94mΩ |
| Rated Power Dissipation: | 96W |
| Qg Gate Charge: | 22nC |
| Gate-Source Voltage-Max [Vgss]: | 23V |
| Drain Current: | 26A |
| Turn-on Delay Time: | 18.2ns |
| Turn-off Delay Time: | 21.6ns |
| Rise Time: | 14.6ns |
| Fall Time: | 6ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 4.5V |
| Technology: | SiC |
| Input Capacitance: | 744pF |
| Package Style: | TO-247-3 |
| Mounting Method: | Through Hole |
30
216.6019
6498.057
60
180.5016
10830.096
120
175.0597
21007.164
150
173.3402
26001.03
(SN).jpg "S10B-PHDSS(LF)(SN)")
