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晶体管
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离散器
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金属氧化物半导体场效应晶体管
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FQU5N60CTU
FQU5N60CTU
:
FQU5N60CTU
:
Mosfets
:
onsemi
:
N-Channel 600 V
:
-
:
Tube
:
-
TYPE
DESCRIPTION
Fet Type:
N-Ch
Drain-to-Source Voltage [Vdss]:
600V
Drain-Source On Resistance-Max:
2.5Ω
Rated Power Dissipation:
2.5|W
Qg Gate Charge:
15nC
Package Style:
TO-251 (IPAK)
Mounting Method:
Flange Mount
PDF(1)
70
6.2569
437.983
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