FQP55N10 Mosfets_Inventory of electronic components_Electronic equipment_Power management

FQP55N10


：	FQP55N10
：	Mosfets
：	onsemi
：	N-Channel 100 V
：	-
：	Tube
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	100V
Drain-Source On Resistance-Max:	0.026Ω
Rated Power Dissipation:	155\|W
Qg Gate Charge:	98nC
Package Style:	TO-220-3 (TO-220AB)
Mounting Method:	Flange Mount

PDF(1)

1000

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19839.9

2000

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3000

15.959

47877

4000

15.8172

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