取消
| TYPE | DESCRIPTION |
| Fet Type: | P-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | -30V |
| Drain-Source On Resistance-Max: | 12mΩ |
| Rated Power Dissipation: | 2.5W |
| Qg Gate Charge: | 65nC |
| Gate-Source Voltage-Max [Vgss]: | 25V |
| Drain Current: | -14.5A |
| Turn-on Delay Time: | 14ns |
| Turn-off Delay Time: | 225ns |
| Rise Time: | 16ns |
| Fall Time: | 105ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | -3V |
| Technology: | PowerTrench |
| Height - Max: | 1.75mm |
| Length: | 4.9mm |
| Input Capacitance: | 3500pF |
| Package Style: | SOIC-8 |
| Mounting Method: | Surface Mount |
2500
9.3158
23289.5
5000
7.5963
37981.5
7500
7.5205
56403.75
10000
7.4447
74447
