取消
| TYPE | DESCRIPTION |
| Fet Type: | Dual P-Ch |
| No of Channels: | 2 |
| Drain-to-Source Voltage [Vdss]: | 30V |
| Drain-Source On Resistance-Max: | 35mΩ |
| Rated Power Dissipation: | 1.6W |
| Qg Gate Charge: | 40nC |
| Gate-Source Voltage-Max [Vgss]: | 25V |
| Drain Current: | 6.9A |
| Turn-on Delay Time: | 12ns |
| Turn-off Delay Time: | 68ns |
| Rise Time: | 23ns |
| Fall Time: | 61ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 3V |
| Technology: | Si |
| Input Capacitance: | 1360pF |
| Package Style: | SOIC-8 |
| Mounting Method: | Surface Mount |
2500
12.6033
31508.25
