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FDP20N50F

  • FDP20N50F
  • FDP20N50F
  • FDP20N50F
  • FDP20N50F
FDP20N50F
Mosfets
onsemi
Single N-Channe
-
Tube
-
TYPEDESCRIPTION
Fet Type:N-Ch
No of Channels:1
Drain-to-Source Voltage [Vdss]:500V
Drain-Source On Resistance-Max:0.26Ω
Rated Power Dissipation:250W
Qg Gate Charge:65nC
Gate-Source Voltage-Max [Vgss]:30V
Drain Current:20A
Turn-on Delay Time:100ns
Turn-off Delay Time:210ns
Rise Time:250ns
Fall Time:130ns
Operating Temp Range:-55°C to +150°C
Gate Source Threshold:5V
Technology:DMOS
Height - Max:9.4mm
Length:10.67mm
Input Capacitance:2550pF
Package Style: TO-220-3 (TO-220AB)
Mounting Method:Through Hole
PDF(1)

50

28.1792

1408.96

2000

22.8595

45719

3000

22.5756

67726.8

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