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晶体管
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离散器
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金属氧化物半导体场效应晶体管
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FDMC86102
FDMC86102
:
FDMC86102
:
Mosfets
:
onsemi
:
FDMC86102 Serie
:
-
:
Reel
:
-
TYPE
DESCRIPTION
Fet Type:
N-Ch
Drain-to-Source Voltage [Vdss]:
100V
Drain-Source On Resistance-Max:
24mΩ
Rated Power Dissipation:
2.3|W
Qg Gate Charge:
18nC
Mounting Method:
Surface Mount
PDF(1)
3000
14.6161
43848.3
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