FDMB3900AN Mosfets_Inventory of electronic components_Electronic equipment_Power management

FDMB3900AN


：	FDMB3900AN
：	Mosfets
：	onsemi
：	Dual N-Channel
：	-
：	Reel
：	-

TYPE	DESCRIPTION
Fet Type:	Dual N-Ch
Drain-to-Source Voltage [Vdss]:	25V
Drain-Source On Resistance-Max:	23mΩ
Rated Power Dissipation:	800\|mW
Qg Gate Charge:	11nC
Package Style:	MICROFET 3x1.9
Mounting Method:	Surface Mount

PDF(1)

3000

6.0184

18055.2

6000

5.7351

34410.6

9000

5.4418

48976.2

12000

5.1587

61904.4

Texas Instruments

LPV324MT/NOPB

IC OPAMP GP 4 CIRCUIT 14TSSOP

JST

SB6P-HVQ-S(LF)(SN)

SB6P-HVQ-S(LF)(SN): 2.54mm 250 V 3 A Through Hole Header

CITIZEN FINEDEVICE

HCM497372800ABJT

HCM49 Series 7.3728 MHz ±30 ppm 18 pF -40 to +85 °C Surface Mount AT-CUT Crystal

Vishay

IRF630PBF-BE3

Single N-Channel 200 V 0.4 O 43 nC Power - TO-220-3 (TO-220AB)

Vishay

SI8823EDB-T2-E1

P-Channel 20 V 95 mOhm 900 mW TrenchFET Gen III Mosfet MICRO FOOT 0.8 x 0.8

onsemi

FDMB3900AN

Dual N-Channel 25 V 23 mΩ 17 nC SMT PowerTrench® Mosfet - MicroFET 3x1.9

Diodes Incorporated

BC807-25W-7

BC807 Series 45 V 500 mA 200 mW SMT PNP Small Signal Transistor - SOT-323

Central Semiconductor

CMDSH05-4 TR PBFREE

Surface mount Diode-Schottky ( Datasheet ECAD Model: Convert this file for your ECAD tool by downloading the free Library Loader. Learn more about ECAD model. Mfr. Name: Central Semiconductor Standard Pkg: Product Variant Information section Available Packaging Reel ReelSelected Variant Qty: 9,000+ / Web Price: ¥0.978 / Stock: 0 Qty: 3,000+¥0.978 Stock: 0 Package Qty: 3000 per Reel Date Code: