FDG6332C Mosfets_Inventory of electronic components_Electronic equipment_Power management

FDG6332C


：	FDG6332C
：	Mosfets
：	onsemi
：	Dual N & P-
：	-
：	Reel
：	-

TYPE	DESCRIPTION
Fet Type:	Dual N/P-Ch
Drain-to-Source Voltage [Vdss]:	20V/-20V
Drain-Source On Resistance-Max:	300mΩ/420mΩ
Rated Power Dissipation:	0.3\|W
Qg Gate Charge:	1.1nC/1.4nC
Package Style:	SOT-363 (SC-70-6, SC-88)
Mounting Method:	Surface Mount

PDF(1)

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