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FCPF11N60NT

  • FCPF11N60NT
  • FCPF11N60NT
FCPF11N60NT
Mosfets
onsemi
MOSFET SupreMOS
-
Tube
-
TYPEDESCRIPTION
Fet Type:N-Ch
No of Channels:1
Drain-to-Source Voltage [Vdss]:600V
Drain-Source On Resistance-Max:299mΩ
Rated Power Dissipation:32.1W
Qg Gate Charge:27.4nC
Gate-Source Voltage-Max [Vgss]:30V
Drain Current:10.8A
Turn-on Delay Time:13.6ns
Turn-off Delay Time:42ns
Rise Time:9.1ns
Fall Time:10ns
Operating Temp Range:-55°C to +150°C
Gate Source Threshold:4V
Input Capacitance:1130pF
Package Style: TO-220F
Mounting Method:Through Hole
PDF(1)

1000

37.0959

37095.9

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29.618

59236

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