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晶体管
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离散器
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金属氧化物半导体场效应晶体管
/
FCP36N60N
FCP36N60N
:
FCP36N60N
:
Mosfets
:
onsemi
:
FCA47N60 Series
:
-
:
Tube
:
-
TYPE
DESCRIPTION
Fet Type:
N-Ch
Drain-to-Source Voltage [Vdss]:
600V
Drain-Source On Resistance-Max:
90mΩ
Rated Power Dissipation:
312|W
Qg Gate Charge:
112nC
Package Style:
TO-220-3 (TO-220AB)
Mounting Method:
Flange Mount
PDF(1)
1000
75.6207
75620.7
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UC3836D
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