TYPE | DESCRIPTION |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 600V |
Drain-Source On Resistance-Max: | 104MΩ |
Rated Power Dissipation: | 357W |
Qg Gate Charge: | 145nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 37A |
Turn-on Delay Time: | 34ns |
Turn-off Delay Time: | 102ns |
Rise Time: | 20ns |
Fall Time: | 5.7ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 5V |
Technology: | Si |
Height - Max: | 8.787mm |
Length: | 10.36mm |
Input Capacitance: | 4610pF |
Package Style: | TO-220-3 (TO-220AB) |
Mounting Method: | Through Hole |
50
58.3646
2918.23
150
40.8249
6123.735
250
39.396
9849
1000
35.6571
35657.1
1500
34.6439
51965.85