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FCP104N60F

  • FCP104N60F
  • FCP104N60F
FCP104N60F
Mosfets
onsemi
Single N-Channe
-
Tube
-
TYPEDESCRIPTION
Fet Type:N-Ch
No of Channels:1
Drain-to-Source Voltage [Vdss]:600V
Drain-Source On Resistance-Max:104MΩ
Rated Power Dissipation:357W
Qg Gate Charge:145nC
Gate-Source Voltage-Max [Vgss]:20V
Drain Current:37A
Turn-on Delay Time:34ns
Turn-off Delay Time:102ns
Rise Time:20ns
Fall Time:5.7ns
Operating Temp Range:-55°C to +150°C
Gate Source Threshold:5V
Technology:Si
Height - Max:8.787mm
Length:10.36mm
Input Capacitance:4610pF
Package Style: TO-220-3 (TO-220AB)
Mounting Method:Through Hole
PDF(1)

50

58.3646

2918.23

150

40.8249

6123.735

250

39.396

9849

1000

35.6571

35657.1

1500

34.6439

51965.85

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