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晶体管
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离散器
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金属氧化物半导体场效应晶体管
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FCD380N60E
FCD380N60E
:
FCD380N60E
:
Mosfets
:
onsemi
:
N-Channel 600 V
:
-
:
Reel
:
-
TYPE
DESCRIPTION
Fet Type:
N-Ch
Drain-to-Source Voltage [Vdss]:
600V
Drain-Source On Resistance-Max:
380mΩ
Rated Power Dissipation:
106|W
Qg Gate Charge:
34nC
Package Style:
TO-252-3 (DPAK)
Mounting Method:
Surface Mount
PDF(1)
2500
14.6161
36540.25
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