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| TYPE | DESCRIPTION |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 60V |
| Drain-Source On Resistance-Max: | 24mΩ |
| Rated Power Dissipation: | 2.6W |
| Qg Gate Charge: | 17nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 9.8A |
| Turn-on Delay Time: | 3.4ns |
| Turn-off Delay Time: | 13ns |
| Rise Time: | 5.2ns |
| Fall Time: | 7ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 2.5V |
| Technology: | Si |
| Height - Max: | 1.1mm |
| Length: | 5.15mm |
| Input Capacitance: | 864pF |
2500
3.7982
9495.5
5000
3.5807
17903.5
7500
3.4391
25793.25
10000
3.2216
32216
12500
3.08
38500
