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| TYPE | DESCRIPTION |
| Fet Type: | P-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 60V |
| Drain-Source On Resistance-Max: | 70mΩ |
| Rated Power Dissipation: | 1.9W |
| Qg Gate Charge: | 12nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 23.6A |
| Turn-on Delay Time: | 5.3ns |
| Turn-off Delay Time: | 49.4ns |
| Rise Time: | 8.6ns |
| Fall Time: | 29.7ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 3V |
| Technology: | Si |
| Height - Max: | 2.39mm |
| Length: | 6.7mm |
| Input Capacitance: | 1377pF |
2500
3.864
9660
5000
3.6565
18282.5
7500
3.5049
26286.75
10000
3.2974
32974
12500
3.1558
39447.5
